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| STB10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 n n n n n n n n V DSS 400 V R DS(on ) < 0.55 ID 10 A n TYPICAL RDS(on) = 0.46 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 12 1 3 I2PAK TO-262 D2PAK TO-263 APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM (*) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Fact or Storage Temperature Max. O perating Junction Temperature o o Valu e 400 400 30 10 6.3 40 125 1 -65 to 150 150 Unit V V V A A A W W/ oC o o C C (*) Pulse width limited by safe operating area October 1995 1/10 STB10NA40 THERMAL DATA R thj -ca se R thj- amb R thc-sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, < 1%) Max Valu e 10 500 20 6.3 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage T est Con ditio ns I D = 250 A V GS = 0 Min . 400 250 1000 100 T yp. Max. Unit V A A nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 125 oC ON () Symbo l V GS( th) R DS( on) I D(on ) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 10V T est Con ditio ns ID = 250 A ID = 5 A ID = 5 A T c = 100 C 10 o Min . 2.25 T yp. 3 0.46 Max. 3.75 0.55 1.1 Unit V A V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbo l g f s () C is s C o ss C r ss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance T est Con ditio ns V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 5 A VGS = 0 Min . 5 T yp. 7.2 1180 200 55 1600 260 75 Max. Unit S pF pF pF 2/10 STB10NA40 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope T est Con ditio ns V DD = 200 V I D = 5 A V GS = 10 V R G = 47 (see test circuit, figure 3) V DD = 320 V I D = 10 A V GS = 10 V R G = 47 (see test circuit, figure 5) V DD = 320 V I D = 10 A V GS = 10 V Min . T yp. 35 115 250 Max. 50 155 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 54 8 27 75 nC nC nC SWITCHING OFF Symbo l t r( Voff ) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time T est Con ditio ns V DD = 320 V I D = 10 A R G = 47 V GS = 10 V (see test circuit, figure 5) Min . T yp. 75 30 120 Max. 105 45 160 Unit ns ns ns SOURCE DRAIN DIODE Symbo l I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10 A V GS = 0 470 6.5 27.5 I SD = 10 A di/dt = 100 A/s o Tj = 150 C V DD = 100 V (see test circuit, figure 5) T est Con ditio ns Min . T yp. Max. 10 40 1.6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limi ted by safe operating area Safe Operating Area Thermal Impedance 3/10 STB10NA40 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STB10NA40 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STB10NA40 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/10 STB10NA40 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/10 STB10NA40 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2.44 10 13.2 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.37 MIN. 0.169 0.098 0.027 0.047 0.049 0.017 0.047 0.354 0.096 0.393 0.519 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.054 0.055 0.023 0.053 0.368 0.104 0.404 0.531 0.149 0.054 DIM. A C2 B2 B E L1 L2 D L 8/10 e A1 C STB10NA40 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.3 2.49 0.7 1.25 0.45 1.21 9 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.37 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.354 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.054 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C 9/10 STB10NA40 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 10/10 |
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